SI2309DS-T1

SI2309DS-T1-E3 vs SI2309DS-T1 vs SI2309DS-T1-GE3

 
PartNumberSI2309DS-T1-E3SI2309DS-T1SI2309DS-T1-GE3
DescriptionMOSFET RECOMMENDED ALT 781-SI2309CDS-GE3MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
TradenameTrenchFET--
PackagingReel--
Height1.45 mm--
Length2.9 mm--
SeriesSI2--
Width1.6 mm--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSI2309DS-E3--
Unit Weight0.000282 oz--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2309DS-T1-E3 MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
SI2309DS-T1 MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3
SI2309DS-T1-GE3 P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs
Vishay
Vishay
SI2309DS-T1-E3 MOSFET P-CH 60V 1.25A SOT23-3
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