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| PartNumber | SI2308BDS-T1-GE3 | SI2308BDS-T1-E3 |
| Description | MOSFET 60V Vds 20V Vgs SOT-23 | MOSFET 60V Vds 20V Vgs SOT-23 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 2.3 A | 2.3 A |
| Rds On Drain Source Resistance | 156 mOhms | 156 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V |
| Vgs Gate Source Voltage | 10 V | 10 V |
| Qg Gate Charge | 6.8 nC | 6.8 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1.66 W | 1.66 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI2 | SI2 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5 S | 5 S |
| Fall Time | 7 ns | 7 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 10 ns | 10 ns |
| Typical Turn On Delay Time | 4 ns | 4 ns |
| Part # Aliases | SI2308BDS-GE3 | SI2308BDS-E3 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2308BDS-T1-GE3 | MOSFET 60V Vds 20V Vgs SOT-23 | |
| SI2308BDS-T1-E3 | MOSFET 60V Vds 20V Vgs SOT-23 | ||
Vishay |
SI2308BDS-T1-E3 | MOSFET N-CH 60V 2.3A SOT23-3 | |
| SI2308BDS-T1-GE3 | MOSFET N-CH 60V 2.3A SOT23-3 | ||
| SI2308BDS-T1-GE3 , MAX64 | Nuevo y original | ||
| SI2308BDS-T1-E3-CUT TAPE | Nuevo y original | ||
| SI2308BDS-T1-GE3-CUT TAPE | Nuevo y original |