PartNumber | SI2302CDS | SI2302CDS-1-GE3 | SI2302CDS-T1 |
Description | |||
Manufacturer | VISHAY | - | VISHAY |
Product Category | FETs - Single | - | FETs - Single |
Series | - | - | TrenchFETR |
Packaging | - | - | Digi-ReelR Alternate Packaging |
Part Aliases | - | - | SI2302CDS-E3 |
Unit Weight | - | - | 0.050717 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
Technology | - | - | Si |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 1 Channel |
Supplier Device Package | - | - | SOT-23-3 (TO-236) |
Configuration | - | - | Single |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 710mW |
Transistor Type | - | - | 1 N-Channel |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 2.6A (Ta) |
Rds On Max Id Vgs | - | - | 57 mOhm @ 3.6A, 4.5V |
Vgs th Max Id | - | - | 850mV @ 250μA |
Gate Charge Qg Vgs | - | - | 5.5nC @ 4.5V |
Pd Power Dissipation | - | - | 710 mW |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 7 ns |
Rise Time | - | - | 7 ns |
Vgs Gate Source Voltage | - | - | 8 V |
Id Continuous Drain Current | - | - | 2.6 A |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Rds On Drain Source Resistance | - | - | 57 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 30 ns |
Typical Turn On Delay Time | - | - | 8 ns |
Channel Mode | - | - | Enhancement |