SI2302CDS

SI2302CDS vs SI2302CDS-1-GE3 vs SI2302CDS-T1

 
PartNumberSI2302CDSSI2302CDS-1-GE3SI2302CDS-T1
Description
ManufacturerVISHAY-VISHAY
Product CategoryFETs - Single-FETs - Single
Series--TrenchFETR
Packaging--Digi-ReelR Alternate Packaging
Part Aliases--SI2302CDS-E3
Unit Weight--0.050717 oz
Mounting Style--SMD/SMT
Package Case--TO-236-3, SC-59, SOT-23-3
Technology--Si
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--SOT-23-3 (TO-236)
Configuration--Single
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--710mW
Transistor Type--1 N-Channel
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds---
FET Feature--Standard
Current Continuous Drain Id 25°C--2.6A (Ta)
Rds On Max Id Vgs--57 mOhm @ 3.6A, 4.5V
Vgs th Max Id--850mV @ 250μA
Gate Charge Qg Vgs--5.5nC @ 4.5V
Pd Power Dissipation--710 mW
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--7 ns
Rise Time--7 ns
Vgs Gate Source Voltage--8 V
Id Continuous Drain Current--2.6 A
Vds Drain Source Breakdown Voltage--20 V
Rds On Drain Source Resistance--57 mOhms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--30 ns
Typical Turn On Delay Time--8 ns
Channel Mode--Enhancement
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2302CDS-T1-E3 MOSFET 20V Vds 8V Vgs SOT-23
SI2302CDS-T1-GE3 MOSFET 20V Vds 8V Vgs SOT-23
SI2302CDS Nuevo y original
SI2302CDS-1-GE3 Nuevo y original
SI2302CDS-T1 Nuevo y original
SI2302CDS-TI-GE3 Nuevo y original
SI2302CDS-T1-GE3-CUT TAPE Nuevo y original
Vishay
Vishay
SI2302CDS-T1-E3 Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
SI2302CDS-T1-GE3 MOSFET N-CH 20V 2.6A SOT23-3
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