SI153

SI1539CDL-T1-GE3 vs SI1539CDL-T1-E3 vs SI1539CDL-T1-GE3-CUT TAPE

 
PartNumberSI1539CDL-T1-GE3SI1539CDL-T1-E3SI1539CDL-T1-GE3-CUT TAPE
DescriptionMOSFET -30V Vds 20V Vgs SC70-6 N&P PAIR
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current700 mA, 500 mA--
Rds On Drain Source Resistance388 mOhms, 890 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge1.5 nC, 3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation340 mW--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI1--
Transistor Type1 N-Channel, 1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min1.2 S, 0.6 S--
Fall Time15 ns, 10 ns--
Product TypeMOSFET--
Rise Time25 ns, 19 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns, 4 ns--
Typical Turn On Delay Time26 ns, 32 ns--
Part # AliasesSI1539CDL-GE3--
Unit Weight0.000988 oz--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI1539CDL-T1-GE3 MOSFET -30V Vds 20V Vgs SC70-6 N&P PAIR
SI1539DDL-T1-GE3 MOSFET 30V Vds 20V Vgs SOT-363
SI1539CDL-T1-E3 Nuevo y original
SI1539DL MOSFET Transistor, Pair, Complementary, SOT-363
SI1539DL-T1 MOSFET RECOMMENDED ALT 78-SI1539CDL-T1-GE3
SI1539DL-TI-E3 Nuevo y original
SI1539CDL-T1-GE3-CUT TAPE Nuevo y original
Vishay
Vishay
SI1539DL-T1-E3 Nuevo y original
SI1539DL-T1-GE3 IGBT Transistors MOSFET 30V/-30V -.45/-.42A .3/.27W
SI1539DDL-T1-GE3 MOSFET N/P-CH 30V SC70-6
SI1539CDL-T1-GE3 MOSFET N/P-CH 30V SOT363
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