PartNumber | SI1539CDL-T1-GE3 | SI1539CDL-T1-E3 | SI1539CDL-T1-GE3-CUT TAPE |
Description | MOSFET -30V Vds 20V Vgs SC70-6 N&P PAIR | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-363-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel, P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 700 mA, 500 mA | - | - |
Rds On Drain Source Resistance | 388 mOhms, 890 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 1.5 nC, 3 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 340 mW | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Series | SI1 | - | - |
Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 1.2 S, 0.6 S | - | - |
Fall Time | 15 ns, 10 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 25 ns, 19 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 14 ns, 4 ns | - | - |
Typical Turn On Delay Time | 26 ns, 32 ns | - | - |
Part # Aliases | SI1539CDL-GE3 | - | - |
Unit Weight | 0.000988 oz | - | - |