SI148

SI1480DH-T1-GE3 vs SI1482 vs SI1484

 
PartNumberSI1480DH-T1-GE3SI1482SI1484
DescriptionMOSFET 100V Vds 20V Vgs SC70-6
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current2.6 A--
Rds On Drain Source Resistance161 mOhms--
Vgs th Gate Source Threshold Voltage1.6 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1 mm--
Length2.1 mm--
Transistor Type1 N-Channel--
Width1.25 mm--
BrandVishay / Siliconix--
Forward Transconductance Min3.7 S--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time45 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time11 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.000988 oz--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI1480DH-T1-GE3 MOSFET 100V Vds 20V Vgs SC70-6
SI1488DH-T1-E3 MOSFET RECOMMENDED ALT 78-SI1416EDH-T1-GE3
SI1482 Nuevo y original
SI1484 Nuevo y original
SI1484 56A Nuevo y original
SI148456A Nuevo y original
Vishay
Vishay
SI1488DH-T1-E3 MOSFET N-CH 20V 6.1A SC70-6
SI1489EDH-T1-GE3 MOSFET P-CH 8V 2A SOT-363
SI1488DH-T1-GE3 MOSFET N-CH 20V 6.1A SC70-6
SI1480DH-T1-GE3 Trans MOSFET N-CH 100V 2.1A 6-Pin SC-70 T/R
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