PartNumber | SBC847CDW1T1G | SBC847CDXV6T1G | SBC847CDW1T1 |
Description | Bipolar Transistors - BJT SSP XSTR SC-88 NPN | Bipolar Transistors - BJT SS GP XSTR NPN 45V | TRANS 2NPN 45V 0.1A SOT-363 |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-363-6 | - | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | 45 V | - | - |
Collector Base Voltage VCBO | 50 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Collector Emitter Saturation Voltage | 250 mV | - | - |
Maximum DC Collector Current | 100 mA | - | - |
Gain Bandwidth Product fT | 100 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | BC846C | BC847CDXV6 | - |
DC Current Gain hFE Max | 800 at 2 mA, 5 V | - | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
DC Collector/Base Gain hfe Min | 420 at 2 mA, 5 V | - | - |
Pd Power Dissipation | 380 mW | - | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 3000 | 4000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.000265 oz | - | - |