 |  | |
| PartNumber | RYC002N05T316 | RYC002N05T316TL |
| Description | MOSFET 0.9V Drive Nch Si MOSFET | |
| Manufacturer | ROHM Semiconductor | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 50 V | - |
| Id Continuous Drain Current | 200 mA | - |
| Rds On Drain Source Resistance | 1.6 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | - |
| Vgs Gate Source Voltage | 8 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 350 mW | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Transistor Type | 1 N-Channel | - |
| Brand | ROHM Semiconductor | - |
| Forward Transconductance Min | 200 mS | - |
| Fall Time | 43 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 8 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 17 ns | - |
| Typical Turn On Delay Time | 5 ns | - |
| Part # Aliases | RYC002N05 | - |
| Unit Weight | 0.000282 oz | - |