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| PartNumber | RUR020N02TL | RUR020N02TL (ROHM) | RUR020N02TL-CUT TAPE |
| Description | MOSFET N-CH 20V 2A TSMT3 | ||
| Manufacturer | Rohm Semiconductor | - | - |
| Product Category | FETs - Single | - | - |
| Series | RUR020N02 | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SC-96 | - | - |
| Technology | Si | - | - |
| Operating Temperature | 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 1 Channel | - | - |
| Supplier Device Package | TSMT3 | - | - |
| Configuration | Single | - | - |
| FET Type | MOSFET N-Channel, Metal Oxide | - | - |
| Power Max | 540mW | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Drain to Source Voltage Vdss | 20V | - | - |
| Input Capacitance Ciss Vds | 180pF @ 10V | - | - |
| FET Feature | Logic Level Gate, 1.5V Drive | - | - |
| Current Continuous Drain Id 25°C | 2A (Ta) | - | - |
| Rds On Max Id Vgs | 105 mOhm @ 2A, 4.5V | - | - |
| Vgs th Max Id | 1V @ 1mA | - | - |
| Gate Charge Qg Vgs | 2nC @ 4.5V | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 30 ns | - | - |
| Rise Time | 17 ns | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Rds On Drain Source Resistance | 75 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Forward Transconductance Min | 1.8 S | - | - |
| Channel Mode | Enhancement | - | - |