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| PartNumber | RS1E200GNTB | RS1E200BNTB |
| Description | MOSFET 4.5V Drive Nch MOSFET | MOSFET 4.5V Drive Nch MOSFET |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | HSOP-8 | HSOP-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 20 A | 20 A |
| Rds On Drain Source Resistance | 4.6 mOhms | 2.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 16.8 nC | 59 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 3 W | 25 W |
| Configuration | Single | Single |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor |
| Forward Transconductance Min | 18 S | - |
| Fall Time | 8.4 ns | 25 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7.2 ns | 65 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34.7 ns | 105 ns |
| Typical Turn On Delay Time | 13.2 ns | 20 ns |
| Part # Aliases | RS1E200GN | RS1E200BN |
| Unit Weight | 0.002490 oz | 0.196723 oz |
| Channel Mode | - | Enhancement |