 | | | |
| PartNumber | RN4602(TE85L,F) | RN4602 | RN4602(TE85L) |
| Description | Pre-Biased BJT | ||
| Manufacturer | - | Toshiba Semiconductor and Storage | - |
| Product Category | - | Transistors (BJT) - Arrays, Pre-Biased | - |
| Series | - | - | - |
| Packaging | - | Digi-ReelR Alternate Packaging | - |
| Unit Weight | - | 0.001058 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | SC-74, SOT-457 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SM6 | - |
| Configuration | - | Dual | - |
| Power Max | - | 300mW | - |
| Transistor Type | - | 1 NPN, 1 PNP - Pre-Biased (Dual) | - |
| Current Collector Ic Max | - | 100mA | - |
| Voltage Collector Emitter Breakdown Max | - | 50V | - |
| Resistor Base R1 Ohms | - | 10k | - |
| Resistor Emitter Base R2 Ohms | - | 10k | - |
| DC Current Gain hFE Min Ic Vce | - | 50 @ 10mA, 5V | - |
| Vce Saturation Max Ib Ic | - | 300mV @ 250μA, 5mA | - |
| Current Collector Cutoff Max | - | 100nA (ICBO) | - |
| Frequency Transition | - | 200MHz | - |
| Pd Power Dissipation | - | 300 mW | - |
| Collector Emitter Voltage VCEO Max | - | - 50 V 50 V | - |
| Transistor Polarity | - | NPN PNP | - |
| Emitter Base Voltage VEBO | - | - 10 V 10 V | - |
| Maximum DC Collector Current | - | - 100 mA 100 mA | - |
| Continuous Collector Current | - | - 100 mA 100 mA | - |
| DC Collector Base Gain hfe Min | - | 50 | - |
| Typical Input Resistor | - | 10 kOhms | - |
| Typical Resistor Ratio | - | 1 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
RN4602TE85LF | Bipolar Transistors - Pre-Biased BRT PNP NPN 100mA -50V | |
| RN4602TE85LF | Bipolar Transistors - Pre-Biased BRT PNP NPN 100mA -50V | ||
| RN4602TE85LFCT-ND | Nuevo y original | ||
| RN4602TE85LFDKR-ND | Nuevo y original | ||
| RN4602TE85LFTR-ND | Nuevo y original | ||
| RN4602(TE85L,F) | Pre-Biased BJT | ||
| RN4602 | Nuevo y original | ||
| RN4602(TE85L) | Nuevo y original | ||
| RN4602-TE85L | Nuevo y original | ||
| RN4602/YB | Nuevo y original |