RN4601

RN4601(TE85L,F) vs RN4601(TE85LF)CT-ND vs RN4601

 
PartNumberRN4601(TE85L,F)RN4601(TE85LF)CT-NDRN4601
DescriptionBipolar Transistors - Pre-Biased SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
ManufacturerToshiba-TOSHIBA
Product CategoryBipolar Transistors - Pre-Biased-Transistors (BJT) - Arrays, Pre-Biased
ConfigurationDual--
Transistor PolarityNPN, PNP--
Typical Input Resistor4.7 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSM-6--
DC Collector/Base Gain hfe Min30--
Maximum Operating Frequency200 MHz, 250 MHz--
Collector Emitter Voltage VCEO Max- 50 V, 50 V--
Continuous Collector Current- 100 mA, 100 mA--
Peak DC Collector Current- 100 mA, 100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReel--
Emitter Base Voltage VEBO- 10 V, 10 V--
BrandToshiba--
Channel ModeEnhancement--
Maximum DC Collector Current- 100 mA, 100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
RN4601(TE85L,F) Bipolar Transistors - Pre-Biased SM6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
RN4601(TE85LF)CT-ND Nuevo y original
RN4601(TE85LF)DKR-ND Nuevo y original
RN4601(TE85LF)TR-ND Nuevo y original
RN4601 Nuevo y original
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