RN2511

RN2511(TE85L,F) vs RN2511 vs RN2511 / YM

 
PartNumberRN2511(TE85L,F)RN2511RN2511 / YM
DescriptionBipolar Transistors - Pre-Biased SMV PLN (LF) TRANSISTOR Pd=300mW F=200MHz
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
ConfigurationDual--
Transistor PolarityPNP--
Typical Input Resistor10 kOhms--
Mounting StyleSMD/SMT--
Package / CaseSMV-5--
DC Collector/Base Gain hfe Min120--
Maximum Operating Frequency200 MHz--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA--
Peak DC Collector Current- 100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReelDigi-ReelR Alternate Packaging-
Emitter Base Voltage VEBO- 5 V--
BrandToshiba--
Channel ModeEnhancement--
Maximum DC Collector Current- 100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Series---
Package Case-SC-74A, SOT-753-
Mounting Type-Surface Mount-
Supplier Device Package-SMV-
Power Max-300mW-
Transistor Type-2 PNP - Pre-Biased (Dual) (Emitter Coupled)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-10k-
Resistor Emitter Base R2 Ohms---
DC Current Gain hFE Min Ic Vce-120 @ 1mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 250μA, 5mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-200MHz-
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
RN2511(TE85L,F) Bipolar Transistors - Pre-Biased SMV PLN (LF) TRANSISTOR Pd=300mW F=200MHz
RN2511(TE85LF)CT-ND Nuevo y original
RN2511(TE85LF)DKR-ND Nuevo y original
RN2511(TE85LF)TR-ND Nuevo y original
RN2511 Nuevo y original
RN2511 / YM Nuevo y original
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