RN2131M

RN2131MFV(TPL3) vs RN2131MFV(TL3,T) vs RN2131MFV

 
PartNumberRN2131MFV(TPL3)RN2131MFV(TL3,T)RN2131MFV
DescriptionBipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx0ohmsBipolar Transistors - Pre-Biased Bias Resistor PNP 100kohm -100mA -50V
ManufacturerToshibaToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedTransistors (BJT) - Single, Pre-Biased
RoHSYY-
ConfigurationSingle-Single
Transistor PolarityPNP-PNP
Typical Input Resistor100 kOhms-100 kOhms
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-723--
DC Collector/Base Gain hfe Min120--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA-- 100 mA
Peak DC Collector Current100 mA-100 mA
Pd Power Dissipation150 mW--
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesRN2131RN2131-
PackagingReelReelReel
Collector Base Voltage VCBO- 50 V--
DC Current Gain hFE Max400--
Emitter Base Voltage VEBO- 5 V--
Height0.5 mm--
Length1.2 mm--
Operating Temperature Range- 65 C to + 150 C--
TypePNP Epitaxial Silicon Transistor--
Width0.8 mm--
BrandToshibaToshiba-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity80008000-
SubcategoryTransistorsTransistors-
Package Case--SOT-723
Pd Power Dissipation--150 mW
Collector Emitter Voltage VCEO Max--- 50 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--120
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
RN2131MFV(TPL3) Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx0ohms
RN2131MFV(TL3,T) Bipolar Transistors - Pre-Biased Bias Resistor PNP 100kohm -100mA -50V
RN2131MFV(TPL3) Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx0ohms
RN2131MFV(TL3,T) Bipolar Transistors - Pre-Biased Bias Resistor PNP 100kohm -100mA -50V
RN2131MFV Nuevo y original
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