PartNumber | RN2131MFV(TPL3) | RN2131MFV(TL3,T) | RN2131MFV |
Description | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 100Kohmsx0ohms | Bipolar Transistors - Pre-Biased Bias Resistor PNP 100kohm -100mA -50V | |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
RoHS | Y | Y | - |
Configuration | Single | - | Single |
Transistor Polarity | PNP | - | PNP |
Typical Input Resistor | 100 kOhms | - | 100 kOhms |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-723 | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Collector Emitter Voltage VCEO Max | - 50 V | - | - |
Continuous Collector Current | - 100 mA | - | - 100 mA |
Peak DC Collector Current | 100 mA | - | 100 mA |
Pd Power Dissipation | 150 mW | - | - |
Minimum Operating Temperature | - 65 C | - | - 65 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | RN2131 | RN2131 | - |
Packaging | Reel | Reel | Reel |
Collector Base Voltage VCBO | - 50 V | - | - |
DC Current Gain hFE Max | 400 | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Height | 0.5 mm | - | - |
Length | 1.2 mm | - | - |
Operating Temperature Range | - 65 C to + 150 C | - | - |
Type | PNP Epitaxial Silicon Transistor | - | - |
Width | 0.8 mm | - | - |
Brand | Toshiba | Toshiba | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
Factory Pack Quantity | 8000 | 8000 | - |
Subcategory | Transistors | Transistors | - |
Package Case | - | - | SOT-723 |
Pd Power Dissipation | - | - | 150 mW |
Collector Emitter Voltage VCEO Max | - | - | - 50 V |
Emitter Base Voltage VEBO | - | - | - 5 V |
DC Collector Base Gain hfe Min | - | - | 120 |