RN211

RN2119MFV(TPL3) vs RN2118MFV(TPL3)

 
PartNumberRN2119MFV(TPL3)RN2118MFV(TPL3)
DescriptionBipolar Transistors - Pre-Biased Bias ResistorBipolar Transistors - Pre-Biased -50volts 100mA 3Pin 47Kohms x 10Kohms
ManufacturerToshibaToshiba
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYY
ConfigurationSingle-
Transistor PolarityPNPPNP
Typical Input Resistor1 kOhms47 kOhms
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-723-
DC Collector/Base Gain hfe Min12050
Collector Emitter Voltage VCEO Max- 50 V- 50 V
Continuous Collector Current- 100 mA- 100 mA
Peak DC Collector Current100 mA-
Pd Power Dissipation150 mW150 mW
Minimum Operating Temperature- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesRN2119RN2118
PackagingReelReel
Collector Base Voltage VCBO- 50 V- 50 V
DC Current Gain hFE Max400-
Emitter Base Voltage VEBO- 5 V- 25 V
Height0.5 mm1.2 mm
Length1.2 mm1.2 mm
Operating Temperature Range- 65 C to + 150 C- 65 C to + 150 C
TypePNP Epitaxial Silicon TransistorPNP Epitaxial Silicon Transistor
Width0.8 mm0.5 mm
BrandToshibaToshiba
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity80008000
SubcategoryTransistorsTransistors
Typical Resistor Ratio-4.7
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
RN2119MFV(TPL3) Bipolar Transistors - Pre-Biased Bias Resistor
RN2118MFV(TPL3) Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 47Kohms x 10Kohms
RN2119MFV(TPL3) Bipolar Transistors - Pre-Biased Bias Resisto
RN2118MFV(TPL3) Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 47Kohms x 10Kohms
RN2118MFV Nuevo y original
RN2118MFV(TPL3)CT-ND Nuevo y original
RN2118MFV(TPL3)DKR-ND Nuevo y original
RN2118MFV(TPL3)TR-ND Nuevo y original
RN2119MFV(TPL3)CT-ND Nuevo y original
RN2119MFV(TPL3)DKR-ND Nuevo y original
RN2119MFV(TPL3)TR-ND Nuevo y original
RN2119MFV Nuevo y original
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