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| PartNumber | RN2119MFV(TPL3) | RN2118MFV(TPL3) |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 47Kohms x 10Kohms |
| Manufacturer | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y |
| Configuration | Single | - |
| Transistor Polarity | PNP | PNP |
| Typical Input Resistor | 1 kOhms | 47 kOhms |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-723 | - |
| DC Collector/Base Gain hfe Min | 120 | 50 |
| Collector Emitter Voltage VCEO Max | - 50 V | - 50 V |
| Continuous Collector Current | - 100 mA | - 100 mA |
| Peak DC Collector Current | 100 mA | - |
| Pd Power Dissipation | 150 mW | 150 mW |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | RN2119 | RN2118 |
| Packaging | Reel | Reel |
| Collector Base Voltage VCBO | - 50 V | - 50 V |
| DC Current Gain hFE Max | 400 | - |
| Emitter Base Voltage VEBO | - 5 V | - 25 V |
| Height | 0.5 mm | 1.2 mm |
| Length | 1.2 mm | 1.2 mm |
| Operating Temperature Range | - 65 C to + 150 C | - 65 C to + 150 C |
| Type | PNP Epitaxial Silicon Transistor | PNP Epitaxial Silicon Transistor |
| Width | 0.8 mm | 0.5 mm |
| Brand | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 8000 |
| Subcategory | Transistors | Transistors |
| Typical Resistor Ratio | - | 4.7 |