RN1702JE(T

RN1702JE(TE85L,F) vs RN1702JE(TE85LF)CT-ND vs RN1702JE(TE85LF)

 
PartNumberRN1702JE(TE85L,F)RN1702JE(TE85LF)CT-NDRN1702JE(TE85LF)
DescriptionBipolar Transistors - Pre-Biased Gen Trans NPN x 2 ESV, 50V, 100A
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseESV-5--
DC Collector/Base Gain hfe Min50--
Maximum Operating Frequency250 MHz--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation100 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesRN1702--
PackagingReel--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO10 V--
Operating Temperature Range- 55 C to + 150 C--
BrandToshiba--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
RN1702JE(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 ESV, 50V, 100A
RN1702JE(TE85L,F) Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 ESV, 50V, 100A
RN1702JE(TE85LF)CT-ND Nuevo y original
RN1702JE(TE85LF)DKR-ND Nuevo y original
RN1702JE(TE85LF)TR-ND Nuevo y original
RN1702JE(TE85LF) Nuevo y original
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