 | | | |
| PartNumber | RN1610 | RN1610 SOT163-XK | RN1610(TE85L |
| Description | |||
| Manufacturer | TOSHIBA | - | Toshiba Semiconductor and Storage |
| Product Category | Transistors (BJT) - Arrays, Pre-Biased | - | Transistors (BJT) - Arrays, Pre-Biased |
| Series | - | - | - |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Package Case | - | - | SC-74, SOT-457 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SM6 |
| Power Max | - | - | 300mW |
| Transistor Type | - | - | 2 NPN - Pre-Biased (Dual) |
| Current Collector Ic Max | - | - | 100mA |
| Voltage Collector Emitter Breakdown Max | - | - | 50V |
| Resistor Base R1 Ohms | - | - | 4.7k |
| Resistor Emitter Base R2 Ohms | - | - | - |
| DC Current Gain hFE Min Ic Vce | - | - | 120 @ 1mA, 5V |
| Vce Saturation Max Ib Ic | - | - | 300mV @ 250μA, 5mA |
| Current Collector Cutoff Max | - | - | 100nA (ICBO) |
| Frequency Transition | - | - | 250MHz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
RN1611(TE85L,F) | Bipolar Transistors - Pre-Biased SM6 PLN (LF) TRANSISTOR Pd 300mW F 250MHz | |
| RN1610(TE85L,F) | Bipolar Transistors - Pre-Biased SM6 PLN (LF) TRANSISTOR Pd 300mW F 250MHz | ||
| RN1610(TE85LF)CT-ND | Nuevo y original | ||
| RN1610(TE85LF)DKR-ND | Nuevo y original | ||
| RN1610(TE85LF)TR-ND | Nuevo y original | ||
| RN1611(TE85LF)CT-ND | Nuevo y original | ||
| RN1611(TE85LF)DKR-ND | Nuevo y original | ||
| RN1611(TE85LF)TR-ND | Nuevo y original | ||
| RN1610 | Nuevo y original | ||
| RN1610 SOT163-XK | Nuevo y original | ||
| RN1610(TE85L | Nuevo y original | ||
| RN1611 | Nuevo y original | ||
| RN1611(XM) | Nuevo y original |