 |  | | |
| PartNumber | RN1115MFV(TL3,T) | RN1115MFV(TPL3) | RN1115MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 2.2kohm | Bipolar Transistors - Pre-Biased 2.2Kohms x 10Kohms | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Series | RN1115MFV | RN1115MFV | - |
| Packaging | Reel | Reel | - |
| Brand | Toshiba | Toshiba | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Transistor Polarity | - | NPN | - |
| Typical Input Resistor | - | 2.2 kOhms | - |
| Typical Resistor Ratio | - | 0.22 | - |
| Mounting Style | - | SMD/SMT | - |
| DC Collector/Base Gain hfe Min | - | 50 | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Continuous Collector Current | - | 100 mA | - |
| Pd Power Dissipation | - | 150 mW | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Collector Base Voltage VCBO | - | 50 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Height | - | 1.2 mm | - |
| Length | - | 1.2 mm | - |
| Operating Temperature Range | - | - 65 C to + 150 C | - |
| Type | - | NPN Epitaxial Silicon Transistor | - |
| Width | - | 0.5 mm | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
RN1115MFV,L3F | Bipolar Transistors - Pre-Biased BIAS RESISTOR BUILT IN TRANSISTOR | |
| RN1115MFV(TL3,T) | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 2.2kohm | ||
| RN1115MFV(TPL3) | Bipolar Transistors - Pre-Biased 2.2Kohms x 10Kohms | ||
| RN1115MFV(TPL3) | Bipolar Transistors - Pre-Biased 2.2Kohms x 10Kohms | ||
| RN1115MFVL3FCT-ND | Nuevo y original | ||
| RN1115MFVL3FDKR-ND | Nuevo y original | ||
| RN1115MFVL3FTR-ND | Nuevo y original | ||
| RN1115MFV | Nuevo y original |