| PartNumber | RJK6020DPK-00#T0 | RJK6024DP3-A0#J2 | RJK6024DPD-00#J2 |
| Description | MOSFET PMOSFET | MOSFET MOSFET | MOSFET MOSFET, 600V |
| Manufacturer | Renesas Electronics | Renesas Electronics | Renesas Electronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
| Package / Case | TO-3P-3 | SOT-223-4 | TO-252-3 |
| Packaging | Tube | Reel | Reel |
| Brand | Renesas Electronics | Renesas Electronics | Renesas Electronics |
| Moisture Sensitive | Yes | - | Yes |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.194007 oz | - | 0.011993 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Id Continuous Drain Current | - | 400 mA | - |
| Rds On Drain Source Resistance | - | 28 Ohms | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 4.3 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 1.04 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Series | - | RJK6024 | RJK6024 |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 77 ns | - |
| Rise Time | - | 14.5 ns | - |
| Typical Turn Off Delay Time | - | 48 ns | - |
| Typical Turn On Delay Time | - | 30 ns | - |