RGT30NS

RGT30NS65DGC9 vs RGT30NS65DGTL vs RGT30NS65D

 
PartNumberRGT30NS65DGC9RGT30NS65DGTLRGT30NS65D
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT APIGBT Transistors 650V 15A IGBT Stop TrenchROHRGT30NS65D (Alt: RGT30NS65D)
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-262-3TO-263-3-
Mounting StyleThrough HoleSMD/SMT-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.65 V1.65 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C30 A30 A-
Pd Power Dissipation133 W133 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeReel-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current200 nA+/- 200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity501000-
SubcategoryIGBTsIGBTs-
Part # AliasesRGT30NS65D(TO-262)RGT30NS65D(LPDS)-
Series-RGT30NS65D-
Continuous Collector Current Ic Max-30 A-
Operating Temperature Range-- 40 C to + 175 C-
Continuous Collector Current-15 A-
Unit Weight-0.068654 oz-
Fabricante Parte # Descripción RFQ
RGT30NS65DGC9 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGT30NS65DGTL IGBT Transistors 650V 15A IGBT Stop Trench
RGT30NS65DGTL IGBT Transistors 650V 15A Field Stop Trench IGBT
RGT30NS65D ROHRGT30NS65D (Alt: RGT30NS65D)
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