PartNumber | RGT30NS65DGC9 | RGT30NS65DGTL | RGT30NS65D |
Description | IGBT Transistors IGBT HIGH VOLT AND CURRENT AP | IGBT Transistors 650V 15A IGBT Stop Trench | ROHRGT30NS65D (Alt: RGT30NS65D) |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-262-3 | TO-263-3 | - |
Mounting Style | Through Hole | SMD/SMT | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
Collector Emitter Saturation Voltage | 1.65 V | 1.65 V | - |
Maximum Gate Emitter Voltage | 30 V | 30 V | - |
Continuous Collector Current at 25 C | 30 A | 30 A | - |
Pd Power Dissipation | 133 W | 133 W | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Tube | Reel | - |
Brand | ROHM Semiconductor | ROHM Semiconductor | - |
Gate Emitter Leakage Current | 200 nA | +/- 200 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 50 | 1000 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | RGT30NS65D(TO-262) | RGT30NS65D(LPDS) | - |
Series | - | RGT30NS65D | - |
Continuous Collector Current Ic Max | - | 30 A | - |
Operating Temperature Range | - | - 40 C to + 175 C | - |
Continuous Collector Current | - | 15 A | - |
Unit Weight | - | 0.068654 oz | - |