RGT3

RGT30NL65DGTL vs RGT30NS65DGC9 vs RGT30NS65D

 
PartNumberRGT30NL65DGTLRGT30NS65DGC9RGT30NS65D
DescriptionIGBT Transistors FIELD STOP TRENCH IGBTIGBT Transistors IGBT HIGH VOLT AND CURRENT APROHRGT30NS65D (Alt: RGT30NS65D)
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-263L-3TO-262-3-
Mounting StyleSMD/SMTThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V650 V-
Collector Emitter Saturation Voltage1.65 V1.65 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C30 A30 A-
Pd Power Dissipation133 W133 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingReelTube-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current200 nA200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity100050-
SubcategoryIGBTsIGBTs-
Part # AliasesRGT30NL65DRGT30NS65D(TO-262)-
Fabricante Parte # Descripción RFQ
RGT30NL65DGTL IGBT Transistors FIELD STOP TRENCH IGBT
RGT30TM65DGC9 IGBT Transistors FIELD STOP TRENCH IGBT
RGT30NS65DGC9 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGT30NS65DGTL IGBT Transistors 650V 15A IGBT Stop Trench
RGT30NS65DGTL IGBT Transistors 650V 15A Field Stop Trench IGBT
RGT30NL65DGTL FIELD STOP TRENCH IGBT
RGT30NS65D ROHRGT30NS65D (Alt: RGT30NS65D)
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