RGCL60TK

RGCL60TK60DGC11 vs RGCL60TK60GC11 vs RGCL60TK60

 
PartNumberRGCL60TK60DGC11RGCL60TK60GC11RGCL60TK60
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT APIGBT Transistors IGBT HIGH VOLT AND CURRENT AP
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-3PFMTO-3PFM-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.4 V1.4 V-
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C30 A30 A-
Pd Power Dissipation54 W54 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current200 nA200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Part # AliasesRGCL60TK60DRGCL60TK60-
Fabricante Parte # Descripción RFQ
RGCL60TK60DGC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL60TK60GC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL60TK60 Nuevo y original
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