RGCL6

RGCL60TK60DGC11 vs RGCL60T00060DGC11 vs RGCL60TK60

 
PartNumberRGCL60TK60DGC11RGCL60T00060DGC11RGCL60TK60
DescriptionIGBT Transistors IGBT HIGH VOLT AND CURRENT AP
ManufacturerROHM Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-3PFM--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.4 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C30 A--
Pd Power Dissipation54 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
PackagingTube--
BrandROHM Semiconductor--
Gate Emitter Leakage Current200 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Part # AliasesRGCL60TK60D--
Fabricante Parte # Descripción RFQ
RGCL60TS60GC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL60TS60DGC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL60TK60DGC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL60TK60GC11 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGCL60T00060DGC11 Nuevo y original
RGCL60TK60 Nuevo y original
RGCL60TS60 Nuevo y original
Top