RFP12N10

RFP12N10L vs RFP12N10 vs RFP12N10L,F12N10L

 
PartNumberRFP12N10LRFP12N10RFP12N10L,F12N10L
DescriptionMOSFET TO-220AB N-Ch Power
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance200 mOhms--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation60 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesRFP12N10L--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Fall Time80 ns--
Product TypeMOSFET--
Rise Time70 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time100 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesRFP12N10L_NL--
Unit Weight0.063493 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
RFP12N10L MOSFET TO-220AB N-Ch Power
RFP12N10 Nuevo y original
RFP12N10L,F12N10L Nuevo y original
RFP12N10LR4154 (6 AMPS) Nuevo y original
ON Semiconductor
ON Semiconductor
RFP12N10L MOSFET N-CH 100V 12A TO-220AB
Top