RFD4

RFD4N06LSM9A vs RFD40N03 vs RFD43F-NF

 
PartNumberRFD4N06LSM9ARFD40N03RFD43F-NF
DescriptionMOSFET 60V Single
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance600 mOhms--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation30 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Fall Time160 ns--
Product TypeMOSFET--
Rise Time130 ns--
Factory Pack Quantity750--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
RFD4N06LSM9A MOSFET 60V Single
RFD40N03 Nuevo y original
RFD43F-NF Nuevo y original
RFD4N06LSM9AS2457 Nuevo y original
RFD4N06L Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RFD4N06LSM Nuevo y original
ON Semiconductor
ON Semiconductor
RFD4N06LSM9A MOSFET N-CH 60V 4A DPAK
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