RF4E110G

RF4E110GNTR vs RF4E110GN vs RF4E110GN TR

 
PartNumberRF4E110GNTRRF4E110GNRF4E110GN TR
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN2020-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance11.3 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
PackagingReel--
SeriesRF4E110GN--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min6 S--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time5.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesRF4E110GN--
Fabricante Parte # Descripción RFQ
RF4E110GNTR MOSFET 4.5V Drive Nch MOSFET
RF4E110GN Nuevo y original
RF4E110GN TR Nuevo y original
RF4E110GNTR MOSFET N-CH 30V 11A 8-HUML
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