RF4E0

RF4E060AJTCR vs RF4E060AJ vs RF4E070BN

 
PartNumberRF4E060AJTCRRF4E060AJRF4E070BN
DescriptionMOSFET NCH 30V 6A MIDDLE POWER
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHUML2020L-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance37 mOhms--
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage12 V--
Qg Gate Charge4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Fall Time5.1 ns--
Product TypeMOSFET--
Rise Time5.8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time7.2 ns--
Fabricante Parte # Descripción RFQ
RF4E075ATTCR MOSFET Pch -30V -7.5A Middle Power MOSFET
RF4E080BNTR MOSFET 4.5V Drive Nch MOSFET
RF4E070GNTR MOSFET 4.5V Drive Nch MOSFET
RF4E060AJTCR MOSFET NCH 30V 6A MIDDLE POWER
RF4E070BNTR MOSFET 4.5V Drive Nch MOSFET
RF4E070GNTR Darlington Transistors MOSFET 4.5V Drive Nch MOSFET
RF4E080BNTR MOSFET N-CH 30V 8A 8-HUML
RF4E060AJ Nuevo y original
RF4E060AJTCR RF4E060AJ IS LOW ON-RESISTANCE A
RF4E070BN Nuevo y original
RF4E070BN TR Nuevo y original
RF4E070BNTR MOSFET N-CH 30V 7A 8-HUML
RF4E070GN Nuevo y original
RF4E075AT Nuevo y original
RF4E075AT TCR Nuevo y original
RF4E075ATTCR MOSFET P-CH 30V 7.5A 8DFN
RF4E0808N Nuevo y original
RF4E080BN Nuevo y original
RF4E080BN TB Nuevo y original
RF4E080BN TR Nuevo y original
RF4E080BNTB Nuevo y original
RF4E080GNTR MOSFET N-CH 30V 8A 8-HUML
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