PartNumber | R6076ENZ1C9 | R60765-5P | R6076ENZ1 |
Description | MOSFET 10V Drive Nch MOSFET | ||
Manufacturer | ROHM Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 76 A | - | - |
Rds On Drain Source Resistance | 38 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 260 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 120 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | ROHM Semiconductor | - | - |
Forward Transconductance Min | 22.5 S | - | - |
Fall Time | 170 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 170 ns | - | - |
Factory Pack Quantity | 450 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 450 ns | - | - |
Typical Turn On Delay Time | 65 ns | - | - |
Part # Aliases | R6076ENZ1 | - | - |
Unit Weight | 0.000353 oz | - | - |