R6007E

R6007ENJTL vs R6007END3TL1 vs R6007ENJ

 
PartNumberR6007ENJTLR6007END3TL1R6007ENJ
DescriptionMOSFET 10V Drive Nch MOSFETMOSFET NCH 600V 7A POWER MOSFET
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current7 A7 A-
Rds On Drain Source Resistance570 mOhms620 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge20 nC20 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation78 W78 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesSuper Junction-MOS EN--
Transistor Type1 N-Channel1 N-Channel-
BrandROHM SemiconductorROHM Semiconductor-
Fall Time35 ns35 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns25 ns-
Factory Pack Quantity10002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time70 ns70 ns-
Typical Turn On Delay Time25 ns25 ns-
Part # AliasesR6007ENJ--
Unit Weight0.077603 oz--
Fabricante Parte # Descripción RFQ
R6007ENJTL MOSFET 10V Drive Nch MOSFET
R6007ENX MOSFET 10V Drive Nch MOSFET
R6007END3TL1 MOSFET NCH 600V 7A POWER MOSFET
R6007ENJ Nuevo y original
R6007ENJTL MOSFET N-CH 600V 7A LPT
R6007ENX MOSFET N-CH 600V 7A TO220
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