PartNumber | PXAC210552FC-V1-R0 | PXAC210552FC-V1-R2 | PXAC210552ND-V1-R5 |
Description | RF MOSFET Transistors RF LDMOS FET | RF MOSFET Transistors RF LDMOS FET | RF MOSFET LDMOS DUAL PG-HB1SOF-4 |
Manufacturer | Cree, Inc. | Cree, Inc. | - |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
RoHS | Y | Y | - |
Transistor Polarity | Dual N-Channel | Dual N-Channel | - |
Technology | Si | Si | - |
Vds Drain Source Breakdown Voltage | 65 V | 65 V | - |
Rds On Drain Source Resistance | 380 mOhms | 380 mOhms | - |
Gain | 17.2 dB | 17.2 dB | - |
Output Power | 55 W | 55 W | - |
Maximum Operating Temperature | + 225 C | + 225 C | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | H-37248-4 | H-37248-4 | - |
Packaging | Reel | Reel | - |
Operating Frequency | 1805 MHz to 2170 MHz | 1805 MHz to 2170 MHz | - |
Type | RF Power MOSFET | RF Power MOSFET | - |
Brand | Wolfspeed / Cree | Wolfspeed / Cree | - |
Number of Channels | 2 Channel | 2 Channel | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
Factory Pack Quantity | 50 | 250 | - |
Subcategory | MOSFETs | MOSFETs | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |