PTFB212

PTFB212503FL-V2-R0 vs PTFB212503EL-V1-R0 vs PTFB212503EL-V1-R250

 
PartNumberPTFB212503FL-V2-R0PTFB212503EL-V1-R0PTFB212503EL-V1-R250
DescriptionRF MOSFET Transistors RF LDMOS FETIC AMP RF LDMOS H-33288-6IC AMP RF LDMOS
ManufacturerCree, Inc.--
Product CategoryRF MOSFET Transistors--
RoHSY--
Transistor PolarityN-Channel--
TechnologySi--
Vds Drain Source Breakdown Voltage65 V--
Rds On Drain Source Resistance50 mOhms--
Gain18 dB--
Output Power240 W--
Maximum Operating Temperature+ 200 C--
Mounting StyleSMD/SMT--
Package / CaseH-34288-4/2--
PackagingReel--
Operating Frequency2110 MHz to 2170 MHz--
TypeRF Power MOSFET--
BrandWolfspeed / Cree--
Number of Channels1 Channel--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Vgs Gate Source Voltage10 V--
Fabricante Parte # Descripción RFQ
N/A
N/A
PTFB212503FL-V2-R0 RF MOSFET Transistors RF LDMOS FET
PTFB212503FL-V2-R250 RF MOSFET Transistors RF LDMOS FET
PTFB212503EL-V1-R0 IC AMP RF LDMOS H-33288-6
PTFB212503EL-V1-R250 IC AMP RF LDMOS
PTFB212503FL-V2-R0 IC AMP RF LDMOS H-34288-4
PTFB212503FL-V2-R250 IC AMP RF LDMOS
Infineon Technologies
Infineon Technologies
PTFB212507SHV1R250XTMA1 RF MOSFET Transistors RFP-LDMOS 9
PTFB212503FLV2R0XTMA1 RF MOSFET Transistors
PTFB212503ELV1R0XTMA1 RF MOSFET Transistors
PTFB212503E Nuevo y original
PTFB212503EL Nuevo y original
PTFB212503EL V1 Nuevo y original
PTFB212503ELV1 Nuevo y original
PTFB212503ELV1R250XTMA1 Nuevo y original
PTFB212503FL Nuevo y original
PTFB212503FL V2 Nuevo y original
PTFB212503FLV2 R250 Nuevo y original
PTFB2125075HVIR250 Nuevo y original
PTFB212507SH V2 R250 Nuevo y original
PTFB212507SHV1 Nuevo y original
Infineon Technologies
Infineon Technologies
PTFB212507SHV1R250XTMA1 RF MOSFET Transistors RFP-LDMOS 9
Top