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| PartNumber | PSMN6R1-30YLDX | PSMN6R1-30YLD | PSMN6R1-30YLD115 |
| Description | MOSFET N-channel 30 V 6.1 mo FET | - Bulk (Alt: PSMN6R1-30YLD115) | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | LFPAK56-5 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 66 A | - | - |
| Rds On Drain Source Resistance | 6.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.68 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 13.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 47 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 7.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 9.8 ns | - | - |
| Typical Turn On Delay Time | 7.5 ns | - | - |
| Unit Weight | 0.003150 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PSMN6R1-30YLDX | MOSFET N-channel 30 V 6.1 mo FET | |
| PSMN6R1-30YLDX | IGBT Transistors MOSFET N-channel 30 V 6.1 mo FET | ||
| PSMN6R1-30YLD | Nuevo y original | ||
| PSMN6R1-30YLD115 | - Bulk (Alt: PSMN6R1-30YLD115) |