PSMN4R5-3

PSMN4R5-30YLC,115 vs PSMN4R5-30YLC vs PSMN4R5-30YLC115

 
PartNumberPSMN4R5-30YLC,115PSMN4R5-30YLCPSMN4R5-30YLC115
DescriptionMOSFET N-CH 30 V 4.8 mOhms LOGIC LEVEL MOSFETNow Nexperia PSMN4R5-30YLC - Power Field-Effect Transistor, 84A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance4.8 mOhms--
Vgs th Gate Source Threshold Voltage1.54 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge20.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation61 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Unit Weight0.002628 oz--
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
PSMN4R5-30YLC,115 MOSFET N-CH 30 V 4.8 mOhms LOGIC LEVEL MOSFET
PSMN4R5-30YLC,115 IGBT Transistors MOSFET N-CH 30 V 4.8 mOhms LOGIC LEVEL MOSFET
PSMN4R5-30YLC Nuevo y original
PSMN4R5-30YLC115 Now Nexperia PSMN4R5-30YLC - Power Field-Effect Transistor, 84A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
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