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| PartNumber | PSMN4R4-80PS,127 | PSMN4R4-80BS,118 |
| Description | MOSFET N-CH 80V 4.1 mOhm Standard level FET | MOSFET Std N-chanMOSFET |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | SMD/SMT |
| Package / Case | TO-220-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V |
| Id Continuous Drain Current | 100 A | 100 A |
| Rds On Drain Source Resistance | 4.1 mOhms | 4.5 mOhms |
| Pd Power Dissipation | 306 W | 306 W |
| Configuration | Single | Single |
| Packaging | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia |
| Fall Time | 18.4 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 38.1 ns | - |
| Factory Pack Quantity | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 66 ns | - |
| Typical Turn On Delay Time | 34.7 ns | - |
| Unit Weight | 0.211644 oz | 0.139332 oz |
| Vgs Gate Source Voltage | - | 20 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R4-80PS,127 | MOSFET N-CH 80V 4.1 mOhm Standard level FET | |
| PSMN4R4-80BS,118 | MOSFET Std N-chanMOSFET | ||
| PSMN4R4-80BS,118 | IGBT Transistors MOSFET Std N-chanMOSFET | ||
| PSMN4R4-80PS,127 | MOSFET N-CH 80V 4.1 mOhm Standard level FET | ||
| PSMN4R4-80BS118 | Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN4R4-80BS,118) | ||
| PSMN4R4-80PS | MOSFET Transistor, N Channel, 100 A, 80 V, 3.3 mohm, 10 V, 3 V RoHS Compliant: Yes | ||
| PSMN4R4-80PS127 | Now Nexperia PSMN4R4-80PS - Power Field-Effect Transistor, 100A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |