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PSMN3R7

PSMN3R7-100BSEJ vs PSMN3R7-30YLC,115 vs PSMN3R7-25YLC,115

 
PartNumberPSMN3R7-100BSEJPSMN3R7-30YLC,115PSMN3R7-25YLC,115
DescriptionMOSFET PSMN3R7-100BSE - N-channel 100 V, 3.95 mO, standard level MOSFET in D2PAKMOSFET N-CH 30V 100A LFPAKIGBT Transistors MOSFET N-Ch 25V 3.9 mOhms
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance3.95 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge246 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation405 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time69 ns--
Product TypeMOSFET--
Rise Time64 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time98 ns--
Typical Turn On Delay Time40 ns--
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia 		PSMN3R7-100BSEJ MOSFET PSMN3R7-100BSE - N-channel 100 V, 3.95 mO, standard level MOSFET in D2PAK
PSMN3R7-100BSEJ PSMN3R7-100BSE/SOT404/D2PAK
NXP Semiconductors
NXP Semiconductors 		PSMN3R7-30YLC,115 MOSFET N-CH 30V 100A LFPAK
PSMN3R7-25YLC,115 IGBT Transistors MOSFET N-Ch 25V 3.9 mOhms
PSMN3R7-25YLC115 Now Nexperia PSMN3R7-25YLC - Power Field-Effect Transistor, 97A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
PSMN3R7-30YLC115 Now Nexperia PSMN3R7-30YLC - Power Field-Effect Transistor, 100A I(D), 30V, 0.00515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
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