PSMN1R5-4

PSMN1R5-40ES,127 vs PSMN1R5-40PS,127

 
PartNumberPSMN1R5-40ES,127PSMN1R5-40PS,127
DescriptionMOSFET N-Ch 40V 1.6 mOhmsMOSFET N-Ch 40V 1.6 mOhms
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseI2PAK-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V
Id Continuous Drain Current120 A120 A
Rds On Drain Source Resistance1.6 mOhms1.6 mOhms
Vgs th Gate Source Threshold Voltage3 V3 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge133 nC133 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation338 W338 W
ConfigurationSingleSingle
PackagingTubeTube
Transistor Type1 N-Channel1 N-Channel
BrandNexperiaNexperia
Product TypeMOSFETMOSFET
Factory Pack Quantity5050
SubcategoryMOSFETsMOSFETs
Unit Weight0.084199 oz0.211644 oz
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
PSMN1R5-40ES,127 MOSFET N-Ch 40V 1.6 mOhms
PSMN1R5-40PS,127 MOSFET N-Ch 40V 1.6 mOhms
PSMN1R5-40ES,127 MOSFET N-Ch 40V 1.6 mOhms
PSMN1R5-40PS,127 MOSFET N-CH 40V 120A TO220AB
PSMN1R5-40ES127 Now Nexperia PSMN1R5-40ES - Power Field-Effect Transistor, 120A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
PSMN1R5-40PS Nuevo y original
PSMN1R5-40PS127 Now Nexperia PSMN1R5-40PS - Power Field-Effect Transistor, 120A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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