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| PartNumber | PSMN057-200B,118 | PSMN057-200P,127 |
| Description | MOSFET TAPE13 MOSFET | MOSFET TRENCH-200 |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | Through Hole |
| Package / Case | TO-263-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V |
| Id Continuous Drain Current | 39 A | 39 A |
| Rds On Drain Source Resistance | 57 mOhms | 57 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 250 W | 250 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Tube |
| Height | 4.5 mm | 9.4 mm |
| Length | 10.3 mm | 10.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.4 mm | 4.7 mm |
| Brand | Nexperia | Nexperia |
| Fall Time | 78 ns | 78 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 58 ns | 58 ns |
| Factory Pack Quantity | 800 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 105 ns | 105 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns |
| Part # Aliases | /T3 PSMN057-200B | PSMN057-200P |
| Unit Weight | - | 0.211644 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PSMN057-200B,118 | MOSFET TAPE13 MOSFET | |
| PSMN057-200P,127 | MOSFET TRENCH-200 | ||
| PSMN057-200B,118 | MOSFET TAPE13 MOSFET | ||
| PSMN057-200P,127 | MOSFET N-CH 200V 39A TO220AB | ||
| PSMN057-200B | Nuevo y original | ||
| PSMN057-200P | MOSFET TRENCH-200 | ||
| PSMN057-200P127 | Now Nexperia PSMN057-200P - Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P |