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| PartNumber | PMZB290UNE2YL | PMZB290UNE,315 |
| Description | MOSFET 20V N-Channel Trench MOSFET | MOSFET N-Chan 20V 1A 715mW |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DFN-1006B-3 | DFN-1006B-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 1.2 A | 1 A |
| Rds On Drain Source Resistance | 320 mOhms | 380 mOhms |
| Vgs th Gate Source Threshold Voltage | 450 mV | 500 mV |
| Vgs Gate Source Voltage | 4.5 V | 4.5 V |
| Qg Gate Charge | 0.8 nC | 0.45 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 715 mW | 715 mW |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia |
| Forward Transconductance Min | 1.9 S | - |
| Fall Time | 4 ns | 31 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 10 ns | 4 ns |
| Factory Pack Quantity | 10000 | 10000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11 ns | 86 ns |
| Typical Turn On Delay Time | 6 ns | 6 ns |
| Unit Weight | 0.000024 oz | 0.000025 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PMZB290UNE2YL | MOSFET 20V N-Channel Trench MOSFET | |
| PMZB290UNE,315 | MOSFET N-Chan 20V 1A 715mW | ||
| PMZB290UNE,315 | MOSFET N-CH 20V 1A DFN1006B-3 | ||
| PMZB290UNE2YL | MOSFET N-CH 20V 1.2A XQFN3 | ||
| PMZB290UNE | Nuevo y original | ||
| PMZB290UNE.316 | Nuevo y original | ||
| PMZB290UNE2 | Nuevo y original | ||
| PMZB290UNE315 | Now Nexperia PMZB290UNE - Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, XQFN3 | ||
| PMZB290UNEZ | Nuevo y original |