 | |  | |
| PartNumber | PMV50EPEAR | PMV50UPE,215 | PMV50ENEAR |
| Description | MOSFET PMV50EPEA/TO-236AB/REEL 7" Q3/ | MOSFET PMV50UPE/TO-236AB/REEL 7" Q3/T | MOSFET N-CH 30V TO-236AB |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 20 V | - |
| Id Continuous Drain Current | 4.2 A | 3.7 A | - |
| Rds On Drain Source Resistance | 45 mOhms | 66 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 470 mV | - |
| Vgs Gate Source Voltage | 10 V | 4.5 V | - |
| Qg Gate Charge | 12.8 nC | 10.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.2 W | 955 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 P-Channel Trench MOSFET | 1 P-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Fall Time | 19 ns | 8.8 us | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 19 ns | 700 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 36 ns | 2.18 us | - |
| Typical Turn On Delay Time | 6 ns | 400 ns | - |
| Unit Weight | 0.000882 oz | 0.000282 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PMV50EPEAR | MOSFET PMV50EPEA/TO-236AB/REEL 7" Q3/ | |
| PMV55ENEAR | MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/ | ||
| PMV50XPR | MOSFET 20V P-channel Trench MOSFET | ||
| PMV50UPE,215 | MOSFET PMV50UPE/TO-236AB/REEL 7" Q3/T | ||
| PMV52ENEAR | MOSFET PMV52ENEA/SOT23/TO-236AB | ||
| PMV50UPEVL | MOSFET PMV50UPE/TO-236AB/REEL 11" Q3/ | ||
| PMV50ENEAR | MOSFET N-CH 30V TO-236AB | ||
| PMV50EPEAR | MOSFET P-CH 30V 4.2A TO236AB | ||
| PMV50UPE,215 | MOSFET P-CH 20V 3.2A TO-236AB | ||
| PMV50UPEVL | MOSFET P-CH 20V 3.7A TO236AB | ||
| PMV50XPR | MOSFET P-CH 20V SOT23 | ||
| PMV55ENEAR | MOSFET N-CH 60V TO-236AB | ||
| PMV50ENEA | Nuevo y original | ||
| PMV50EPEA | Trans MOSFET P-CH 30V 4.2A 3-Pin TO-236AB T/R (Alt: PMV50EPEA) | ||
| PMV50UN | Nuevo y original | ||
| PMV50UPE | Nuevo y original | ||
| PMV50UPE,125 | Nuevo y original | ||
| PMV50UPE.215 | Trans MOSFET P-CH 20V 3.2A 3-Pin TO-236AB T/R (Alt: PMV50UPE,215) | ||
| PMV50UPE125 | Nuevo y original | ||
| PMV50UPE215 | Trench MOSFET P-Channel 20V 3.7A 3-Pin TO-263AB - Bulk (Alt: PMV50UPE215) | ||
| PMV50XP | Nuevo y original | ||
| PMV50XP215 | - Bulk (Alt: PMV50XP215) | ||
| PMV55ENEA | Nuevo y original | ||
| PMV56NN | Nuevo y original | ||
| PMV56XN | Nuevo y original | ||
| PMV56XN PB-FREE | Nuevo y original | ||
| PMV56XN+215 | Now Nexperia PMV56XN - Small Signal Field-Effect Transistor, 3.76A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| PMV56XN/DG | Nuevo y original | ||
| PMV56XN/WM5 | Nuevo y original | ||
| PMV56XN215 | Now Nexperia PMV56XN - Small Signal Field-Effect Transistor, 3.76A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| PMV50A575 | Module: voltage monitoring relay, DIN, SPDT, OUT1:250VAC/8A | ||
NXP Semiconductors |
PMV56XN,215 | IGBT Transistors MOSFET LOW LEVEL FET |