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| PartNumber | PMST5551,115 | PMST5551 | PMST5551115 |
| Description | Bipolar Transistors - BJT TRANS HV TAPE-7 | Now Nexperia PMST5551 - Small Signal Bipolar Transistor, 0.3A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SC-70 | |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 160 V | - | - |
| Collector Base Voltage VCBO | 180 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 600 mA | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 80 at 1 mA, 5 V | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.35 mm | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | 300 mA | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | PMST5551 T/R | - | - |
| Unit Weight | 0.000988 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PMST5551,115 | Bipolar Transistors - BJT TRANS HV TAPE-7 | |
| PMST5551,115 | Bipolar Transistors - BJT TRANS HV TAPE-7 | ||
| PMST5551 | Nuevo y original | ||
| PMST5551115 | Now Nexperia PMST5551 - Small Signal Bipolar Transistor, 0.3A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SC-70 |