 | | |
| PartNumber | PMST5550,115 | PMST5550,135 |
| Description | Bipolar Transistors - BJT TRANS HV TAPE-7 | Bipolar Transistors - BJT TRANS HV TAPE-11 |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-323-3 | SOT-323-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 140 V | 140 V |
| Collector Base Voltage VCBO | 160 V | 160 V |
| Emitter Base Voltage VEBO | 6 V | 6 V |
| Maximum DC Collector Current | 0.3 A | 0.3 A |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| DC Current Gain hFE Max | 60 at 1 mA, 5 V | 60 at 1 mA, 5 V |
| Height | 1 mm | 1 mm |
| Length | 2.2 mm | 2.2 mm |
| Packaging | Reel | Reel |
| Width | 1.35 mm | 1.35 mm |
| Brand | Nexperia | Nexperia |
| DC Collector/Base Gain hfe Min | 60 at 1 mA, 5 V, 60 at 10 mA, 5 V, 20 at 50 mA, 5 V | 60 at 1 mA, 5 V, 60 at 10 mA, 5 V, 20 at 50 mA, 5 V |
| Pd Power Dissipation | 200 mW | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 10000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | PMST5550 T/R | /T3 PMST5550 |
| Unit Weight | 0.000176 oz | 0.000176 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PMST5550,115 | Bipolar Transistors - BJT TRANS HV TAPE-7 | |
| PMST5550,135 | Bipolar Transistors - BJT TRANS HV TAPE-11 | ||
| PMST5550,135 | Bipolar Transistors - BJT TRANS HV TAPE-11 | ||
| PMST5550,115 | TRANS NPN 140V 0.3A SOT323 | ||
| PMST5550 | Nuevo y original | ||
| PMST5550115 | Nuevo y original | ||
| PMST5550135 | Now Nexperia PMST5550 - Small Signal Bipolar Transistor, 0.3A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, SC-70 |