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| PartNumber | PMPB19XP,115 | PMPB19XP | PMPB19XP115 |
| Description | MOSFET PMPB19XP/SOT1220/REEL 7" Q1/T1 | Now Nexperia PMPB19XP - Power Field-Effect Transistor, 7.2A I(D), 20V, 0.0225ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT1220 | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-2020MD-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 10.3 A | - | - |
| Rds On Drain Source Resistance | 19 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 680 mV | - | - |
| Qg Gate Charge | 28.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 12.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 36 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 54 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 43 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Unit Weight | 0.000261 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PMPB19XP,115 | MOSFET PMPB19XP/SOT1220/REEL 7" Q1/T1 | |
| PMPB19XP,115 | MOSFET P-CH 20V 7.2A 6DFN | ||
| PMPB19XP | Nuevo y original | ||
| PMPB19XP115 | Now Nexperia PMPB19XP - Power Field-Effect Transistor, 7.2A I(D), 20V, 0.0225ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT1220 |