 |  | | |
| PartNumber | PMD10K100 | PMD10K-100 | PMD10K40 |
| Description | Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 5.0Vebo 12A 150W | Bipolar Junction Transistor, Darlington, NPN Type, TO-3 | |
| Manufacturer | Central Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3-2 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Maximum DC Collector Current | 20 A | - | - |
| Gain Bandwidth Product fT | 4 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Series | PMD10K100 | - | - |
| DC Current Gain hFE Max | 20000 | - | - |
| Packaging | Tube | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 12 A | - | - |
| DC Collector/Base Gain hfe Min | 1000 | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 20 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | PBFREE PMD10K100 | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Central Semiconductor |
PMD10K100 | Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 5.0Vebo 12A 150W | |
| PMD10K-100 | Nuevo y original | ||
| PMD10K40 | Bipolar Junction Transistor, Darlington, NPN Type, TO-3 | ||
| PMD10K60 | Bipolar Junction Transistor, Darlington, NPN Type, TO-3 | ||
| PMD10K80 | BJT, NPN, 80V, TO-3, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:80V, Transition Frequency ft:-, Power Dissipation Pd:150W, DC Collector Current:12A, DC Current Gain hFE:1000hFE, | ||
| PMD10K100 | Trans Darlington NPN 100V 12A 2-Pin TO-3 Sleeve - Rail/Tube (Alt: PMD10K100) |