PartNumber | PMBTA42DS,125 | PMBTA42DS | PMBTA42DS125 |
Description | Bipolar Transistors - BJT Trans GP BJT NPN 300V 0.1A 6-Pin | Now Nexperia PMBTA42DS - Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 2-Element, NPN, Silicon, SC-74 | |
Manufacturer | Nexperia | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-457-6 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | 300 V | - | - |
Collector Base Voltage VCBO | 300 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Collector Emitter Saturation Voltage | 0.5 V | - | - |
Maximum DC Collector Current | 200 mA | - | - |
Gain Bandwidth Product fT | 50 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | PMBTA42DS | - | - |
DC Current Gain hFE Max | 40 | - | - |
Packaging | Reel | - | - |
Brand | Nexperia | - | - |
Continuous Collector Current | 100 mA | - | - |
Pd Power Dissipation | 700 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |