PartNumber | PEMT1,315 | PEMT1,115 |
Description | Bipolar Transistors - BJT 40V 200mW 2xPNP gen purpose transist | Bipolar Transistors - BJT TRANS DOUBLE TAPE-7 |
Manufacturer | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SOT-666-6 | SOT-666-6 |
Transistor Polarity | PNP | PNP |
Configuration | Dual | Dual |
Collector Emitter Voltage VCEO Max | - 40 V | - 40 V |
Collector Base Voltage VCBO | - 50 V | 50 V |
Emitter Base Voltage VEBO | - 5 V | - 5 V |
Collector Emitter Saturation Voltage | - 200 mV | - |
Maximum DC Collector Current | - 200 mA | - 200 mA |
Gain Bandwidth Product fT | 100 MHz | 100 MHz |
Minimum Operating Temperature | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Packaging | Reel | Reel |
Brand | Nexperia | Nexperia |
Continuous Collector Current | - 100 mA | - 100 mA |
DC Collector/Base Gain hfe Min | 120 | 120 |
Pd Power Dissipation | 300 mW | 200 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 8000 | 4000 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.000095 oz | 0.000095 oz |
RoHS | - | Y |
DC Current Gain hFE Max | - | 120 at 1 mA, 6 V |
Height | - | 0.6 mm |
Length | - | 1.7 mm |
Width | - | 1.3 mm |
Part # Aliases | - | PEMT1 T/R |