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| PartNumber | PDTD113EQAZ | PDTD113ET,215 | PDTD113EUF |
| Description | Bipolar Transistors - Pre-Biased PDTD113EQA/DFN1010D-3/REEL 7 | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 | Bipolar Transistors - Pre-Biased 500 mA, 50 V NPN resistor-equipped |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Package / Case | DFN-1010D-3 | SOT-23-3 | - |
| Packaging | Reel | Reel | Reel |
| Brand | Nexperia | Nexperia | Nexperia |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 5000 | 3000 | 10000 |
| Subcategory | Transistors | Transistors | Transistors |
| Configuration | - | Single | - |
| Transistor Polarity | - | NPN | - |
| Typical Input Resistor | - | 1 kOhms | - |
| Typical Resistor Ratio | - | 1 | - |
| Mounting Style | - | SMD/SMT | - |
| DC Collector/Base Gain hfe Min | - | 33 | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Continuous Collector Current | - | 500 mA | - |
| Peak DC Collector Current | - | 500 mA | - |
| Pd Power Dissipation | - | 250 mW | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Emitter Base Voltage VEBO | - | 10 V | - |
| Height | - | 1 mm | - |
| Length | - | 3 mm | - |
| Width | - | 1.4 mm | - |
| Part # Aliases | - | PDTD113ET T/R | - |
| Unit Weight | - | 0.000282 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PDTD113EQAZ | Bipolar Transistors - Pre-Biased PDTD113EQA/DFN1010D-3/REEL 7 | |
| PDTD113ZT,215 | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 | ||
| PDTD113ET,215 | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 | ||
| PDTD113ZQAZ | Bipolar Transistors - Pre-Biased PDTD113ZQA/DFN1010D-3/REEL 7 | ||
| PDTD113ZUF | Bipolar Transistors - Pre-Biased 500 mA, 50 V NPN resistor-equipped | ||
| PDTD113ZUX | Bipolar Transistors - Pre-Biased 500 mA, 50 V NPN resistor-equipped | ||
| PDTD113ZTVL | Bipolar Transistors - Pre-Biased PDTD113ZT/TO-236AB/REEL 11" Q3 | ||
| PDTD113EUX | Bipolar Transistors - Pre-Biased 500 mA, 50 V NPN resistor-equipped | ||
| PDTD113EUF | Bipolar Transistors - Pre-Biased 500 mA, 50 V NPN resistor-equipped | ||
| PDTD113EUF | TRANS PREBIAS NPN 0.425W | ||
| PDTD113ZUF | TRANS PREBIAS NPN 0.425W | ||
| PDTD113ZUX | TRANS PREBIAS NPN 0.425W | ||
| PDTD113ET,215 | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 | ||
| PDTD113ZT,215 | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 | ||
| PDTD113EQAZ | TRANS PREBIAS NPN 3DFN | ||
| PDTD113EUX | TRANS PREBIAS NPN 0.425W | ||
| PDTD113ZQAZ | TRANS PREBIAS NPN 3DFN | ||
| PDTD113ZTVL | PDTD113ZT/SOT23/TO-236AB | ||
NXP Semiconductors |
PDTD113EK,115 | TRANS PREBIAS NPN 250MW SMT3 | |
| PDTD113ES,126 | TRANS PREBIAS NPN 500MW TO92-3 | ||
| PDTD113ZK,115 | TRANS PREBIAS NPN 250MW SMT3 | ||
| PDTD113ZS,126 | TRANS PREBIAS NPN 500MW TO92-3 | ||
| PDTD1132ET | Nuevo y original | ||
| PDTD113EK | Nuevo y original | ||
| PDTD113EK , GLL4742A-E3/ | Nuevo y original | ||
| PDTD113ES | Nuevo y original | ||
| PDTD113ET | Small Signal BipolarTransistor,0.5AI(C),50VV(BR)CEO, 1-Element, NPN,Silicon,TO-236AB | ||
| PDTD113ET215 | Nuevo y original | ||
| PDTD113EU115 | - Bulk (Alt: PDTD113EU115) | ||
| PDTD113EU135 | - Bulk (Alt: PDTD113EU135) | ||
| PDTD113ZK | Nuevo y original | ||
| PDTD113ZK , GLL4744A | Nuevo y original | ||
| PDTD113ZS | Nuevo y original | ||
| PDTD113ZT | Nuevo y original | ||
| PDTD113ZT215 | Nuevo y original | ||
| PDTD113ZU115 | Nuevo y original | ||
| PDTD113ET T/R | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 | ||
| PDTD113ZT T/R | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 |