PBSS94

PBSS9410PA,115 vs PBSS9410PA vs PBSS9410PA115

 
PartNumberPBSS9410PA,115PBSS9410PAPBSS9410PA115
DescriptionBipolar Transistors - BJT 100V 2.7A PNP LOW VCESAT TRANSISTORTRANSISTOR,PNP,100V,2.7A,SOT1061, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-100V, Transition Frequency ft:115MHz, Power Dissipation Pd:2.1W, DC Collector Current:-2.7A, DC CurNow Nexperia PBSS9410PA - Small Signal Bipolar Transistor, 2.7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, HUSON3
ManufacturerNexperia--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseDFN-2020-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 100 V--
Collector Base Voltage VCBO- 100 V--
Emitter Base Voltage VEBO- 7 V--
Maximum DC Collector Current- 4 A--
Gain Bandwidth Product fT115 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max295--
Height0.61 mm--
Length2.1 mm--
PackagingReel--
Width2.1 mm--
BrandNexperia--
Continuous Collector Current- 2.7 A--
DC Collector/Base Gain hfe Min15--
Pd Power Dissipation2.1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
PBSS9410PA,115 Bipolar Transistors - BJT 100V 2.7A PNP LOW VCESAT TRANSISTOR
PBSS9410PA,115 TRANS PNP 100V 2.7A SOT1061
PBSS9410PA TRANSISTOR,PNP,100V,2.7A,SOT1061, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-100V, Transition Frequency ft:115MHz, Power Dissipation Pd:2.1W, DC Collector Current:-2.7A, DC Cur
PBSS9410PA115 Now Nexperia PBSS9410PA - Small Signal Bipolar Transistor, 2.7A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, HUSON3
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