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| PartNumber | PBSS8510PA,115 | PBSS8510PA , ISB-E41-0-T | PBSS8510PA , ISB-E41-0-TBM-E |
| Description | Bipolar Transistors - BJT 100V 5.2A NPN LOW VCESAT TRANSISTOR | ||
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-2020-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 6 A | - | - |
| Gain Bandwidth Product fT | 150 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 285 | - | - |
| Height | 0.61 mm | - | - |
| Length | 2.1 mm | - | - |
| Packaging | Reel | - | - |
| Width | 2.1 mm | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | 5.2 A | - | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PBSS8510PA,115 | Bipolar Transistors - BJT 100V 5.2A NPN LOW VCESAT TRANSISTOR | |
| PBSS8510PA,115 | Bipolar Transistors - BJT 100V 5.2A NPN LOW VCESAT TRANSISTOR | ||
| PBSS8510PA , ISB-E41-0-T | Nuevo y original | ||
| PBSS8510PA , ISB-E41-0-TBM-E | Nuevo y original |