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| PartNumber | PBSS8110D,115 | PBSS8110D | PBSS8110D T/R |
| Description | Bipolar Transistors - BJT TRANS BISS TAPE-7 | Bipolar Transistors - BJT TRANS BISS TAPE-7 | |
| Manufacturer | Nexperia | NXP | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | Details | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | TSOP | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 100 V | 100 V | - |
| Collector Base Voltage VCBO | 120 V | 120 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Maximum DC Collector Current | 1 A | 1 A | - |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Height | 1 mm | - | - |
| Length | 3.1 mm | - | - |
| Packaging | Reel | Reel | - |
| Width | 1.7 mm | - | - |
| Brand | Nexperia | NXP Semiconductors | - |
| Pd Power Dissipation | 700 mW | 700 mW | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | PBSS8110D T/R | PBSS8110D T/R | - |
| Unit Weight | 0.000705 oz | 0.000705 oz | - |
| DC Collector/Base Gain hfe Min | - | 150 at 1 mA at 10 V 150 at 250 mA at 10 V 100 at 0.5 A at 10 V 80 at 1 A at 10 V | - |
| DC Current Gain hFE Max | - | 150 at 1 mA at 10 V | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
PBSS8110D,115 | Bipolar Transistors - BJT TRANS BISS TAPE-7 | |
| PBSS8110D,115 | TRANS NPN 100V 1A 6TSOP | ||
| PBSS8110D | Nuevo y original | ||
| PBSS8110D T/R | Bipolar Transistors - BJT TRANS BISS TAPE-7 | ||
| PBSS8110D115 | Now Nexperia PBSS8110D - Small Signal Bipolar Transisto |