PBSS5350D,1

PBSS5350D,115 vs PBSS5350D,135 vs PBSS5350D,125

 
PartNumberPBSS5350D,115PBSS5350D,135PBSS5350D,125
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-7Bipolar Transistors - BJT TRANS BISS TAPE-11Bipolar Transistors - BJT Trans GP BJT PNP 50V 3A 6-Pin
ManufacturerNexperiaNexperiaNXP Semiconductors
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max50 V50 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO6 V6 V-
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height1 mm1 mm-
Length3.1 mm3.1 mm-
PackagingReelReelDigi-ReelR Alternate Packaging
Width1.7 mm1.7 mm-
BrandNexperiaNexperia-
Pd Power Dissipation750 mW750 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity300010000-
SubcategoryTransistorsTransistors-
Part # AliasesPBSS5350D T/R/T3 PBSS5350D-
Unit Weight0.000705 oz0.000705 oz-
Series---
Package Case--SC-74, SOT-457
Mounting Type--Surface Mount
Supplier Device Package--6-TSOP
Power Max--750mW
Transistor Type--PNP
Current Collector Ic Max--3A
Voltage Collector Emitter Breakdown Max--50V
DC Current Gain hFE Min Ic Vce--100 @ 2A, 2V
Vce Saturation Max Ib Ic--300mV @ 200mA, 2A
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--100MHz
Fabricante Parte # Descripción RFQ
Nexperia
Nexperia
PBSS5350D,115 Bipolar Transistors - BJT TRANS BISS TAPE-7
PBSS5350D,135 Bipolar Transistors - BJT TRANS BISS TAPE-11
PBSS5350D,135 Bipolar Transistors - BJT TRANS BISS TAPE-11
PBSS5350D,125 Bipolar Transistors - BJT Trans GP BJT PNP 50V 3A 6-Pin
PBSS5350D,115 TRANS PNP 50V 3A 6TSOP
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