PartNumber | PBSS5160DS,115 | PBSS5160PAPSX | PBSS5160PAP,115 |
Description | Bipolar Transistors - BJT LO VCESAT(BISS)TRANS | Bipolar Transistors - BJT 60V 1A PNP/PNP low VCEsat (BISS) trans | Bipolar Transistors - BJT 60V 1A PNP/PNP lo VCEsat transistor |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SC-74-6 | DFN-2020-6 | DFN-2020-6 |
Transistor Polarity | PNP | - | PNP |
Configuration | Single | - | Dual |
Collector Emitter Voltage VCEO Max | 60 V | - | - 60 V |
Collector Base Voltage VCBO | 80 V | - | - 60 V |
Emitter Base Voltage VEBO | - 5 V | - | - 7 V |
Maximum DC Collector Current | - 2 A | - | - 1.5 A |
Gain Bandwidth Product fT | 185 MHz | - | 125 MHz |
Minimum Operating Temperature | - 65 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
DC Current Gain hFE Max | 200 at 1 mA, 5 V | - | 245 |
Height | 1 mm | - | - |
Length | 3.1 mm | - | - |
Packaging | Reel | Reel | Reel |
Width | 1.7 mm | - | - |
Brand | Nexperia | Nexperia | Nexperia |
Continuous Collector Current | - 1 A | - | - 1 A |
Pd Power Dissipation | 290 mW | - | 1450 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | PBSS5160DS T/R | - | - |
Collector Emitter Saturation Voltage | - | - | - 125 mV |
DC Collector/Base Gain hfe Min | - | - | 170 |